Method for depositing tungsten nitride layer in semiconductor device,申请号KR20080037738-传众专利搜索

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发明名称	Method for depositing tungsten nitride layer in semiconductor device
摘要
申请公布号	KR100980059(B1)	申请公布日期	2010.09.03
申请号	KR20080037738	申请日期	2008.04.23
申请人		发明人
分类号	H01L21/283;H01L21/318	主分类号	H01L21/283
代理机构		代理人
主权项
地址

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