MANUFACTURING METHOD OF GERMANIUM ON INSULATOR STRUCTURE, GERMANIUM ON INSULATOR STRUCTURE BY THE METHOD, AND TRANSISTOR USING THE GERMANIUM ON INSULATOR STRUCTURE

摘要

PURPOSE: A manufacturing method, a structure thereof, and a transistor thereof are provided to reduce the defect of a germanium cohesion layer by uniformly controlling the spreading speed of germanium when germanium is cohered. CONSTITUTION: A silicon germanium layer(18) is formed on a SOI structure. An upper silicon layer(20) is formed on the silicon germanium layer. A proton ion is inserted into a lower silicon layer towards the interface between an insulating layer and the lower silicon layer. The upper silicon layer is oxidized by executing a thermal process. A germanium cohesion layer is formed on the upper part of the insulating layer(14) after the thermal process. An oxide silicon layer is formed on the upper part of the germanium cohesion layer. The germanium cohesion layer is exposed by removing the oxide silicon layer.