| 摘要 |
PROBLEM TO BE SOLVED: To obtain an acoustic wave device improved in frequency-temperature characteristic and suppressed in a spurious response of a higher order mod. SOLUTION: The present invention relates to an acoustic wave device 1 including a piezoelectric substrate 2 formed of LiNbO<SB>3</SB>, a SiO<SB>2</SB>layer 6 laminated on the piezoelectric substrate 2, and an IDT electrode 3 disposed in an interface of the piezoelectric substrate 2 and the SiO<SB>2</SB>layer 6, wherein ϕ and θ of Euler angles (ϕ, θ, ψ) of LiNbO<SB>3</SB>satisfy ϕ=0° and 80°≤θ≤130°. In the acoustic wave device which uses an acoustic wave primarily having an SH wave, ψ is set to satisfy 5°≤ψ≤30°. COPYRIGHT: (C)2010,JPO&INPIT |
