发明名称 |
TOP EMITTION AND INVERTED TYPE ORGANIC EMITTING DIODE DISPLAY DEVICE AND METHOD MANUFATURING THEREOF |
摘要 |
PURPOSE: A top-emission-inverted type organic light emitting diode display device and a method for manufacturing the same are provided to simplify a manufacturing process by forming a thin film transistor with a top-emission-inverted shape on a metal substrate. CONSTITUTION: A metal substrate(100) includes a light generating region, a first pad part, and a second pad part. A thin film transistor is formed in the light generating region. A protective layer(120) is formed on the metal substrate to cover the thin film transistor. A first conductive pattern(122) and a second conductive pattern(124) are formed on the protective layer. A cathode electrode(140) is formed in the light generating region to be electrically connected with the second conductive pattern. An organic light emitting layer is formed on the cathode electrode. An anode electrode is formed on the organic light emitting layer. |
申请公布号 |
KR20100096545(A) |
申请公布日期 |
2010.09.02 |
申请号 |
KR20090015460 |
申请日期 |
2009.02.24 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
KIM, YONG CHUL;YOO, JUHN SUK |
分类号 |
H05B33/26;H01L51/50 |
主分类号 |
H05B33/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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