| 发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To execute preferable plasma processing while suppressing damage to a processing object which is caused by plasma generation. <P>SOLUTION: The plasma processing apparatus 100 includes at least: a plasma processing chamber 101 for executing plasma processing to a semiconductor wafer W; a mounting base 102 for arranging the semiconductor wafer W in the plasma processing chamber 101; and a microwave generator 108 for generating plasma in the plasma processing chamber 101, wherein a device capable of intermittently supplying energy is used for the microwave generator 108. <P>COPYRIGHT: (C)2010,JPO&INPIT |
| 申请公布号 |
JP2010192934(A) |
申请公布日期 |
2010.09.02 |
| 申请号 |
JP20100108624 |
申请日期 |
2010.05.10 |
| 申请人 |
TOKYO ELECTRON LTD |
发明人 |
NOZAWA TOSHIHISA;ISHIBASHI KIYOTAKA;NAKANISHI TOSHIO |
| 分类号 |
H01L21/31;C23C16/511;H01J37/32;H01L21/3065;H01L21/316;H01L21/318;H05H1/46 |
主分类号 |
H01L21/31 |
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