发明名称 |
NON-VOLATILE MEMORY DEVICE |
摘要 |
A non-volatile memory device includes a feedback circuit and a precharge switching transistor. The feedback circuit generates a feedback signal based on a voltage level of a bitline during a precharge operation. The precharge switching transistor, in response to the feedback signal, controls a precharge current for precharging the bitline. The speed of the precharge operation may be increased and/or mismatch of the bias signals in precharging a plurality of bitlines may be reduced.
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申请公布号 |
US2010220535(A1) |
申请公布日期 |
2010.09.02 |
申请号 |
US20100713219 |
申请日期 |
2010.02.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG SANG-GU;LEE HEE-WON;LEE JU-SEOK;SONG JUNG-HO |
分类号 |
G11C5/14;G11C7/00 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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