TRANSISTOR, METHOD FOR MANUFACTURING TRANSISTOR, AND APPARATUS FOR MANUFACTURING TRANSISTOR

摘要

Disclosed is a transistor wherein variations in the electrical conductivity of an active layer can be suppressed. Also disclosed are a method for manufacturing a transistor and an apparatus for manufacturing a transistor. In a transistor (1) according to one embodiment of the present invention, a gate insulating film (14) has a multilayer structure that is composed of a first insulating layer (14A) and a second insulating layer (14B). Since the second insulating layer (14B), which is on the active layer (15) side, is configured from a sputtering film of silicon oxide, the second insulating layer (14B) is different from the first insulating layer that is configured from a silicon nitride film formed by a CVD method, and does not contain hydrogen within the film. Consequently, the reduction of oxygen in the active layer by hydrogen can be avoided, and thus an increase in the off current between the source and the drain can be prevented. As a result, a transistor wherein variations in the electrical conductivity of an active layer are suppressed can be obtained, said transistor having stable electrical characteristics.