| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device that improves the efficiency of light extraction while current injection efficiency thereof is improved, to provide a semiconductor light emitting apparatus, and to provide a method of manufacturing the semiconductor light emitting device. <P>SOLUTION: The semiconductor light emitting device includes: a stacked layer structure 1s comprising a first semiconductor layer 1, a second semiconductor layer 2, and a light-emitting layer 3 installed between the first and second semiconductor layers; a first electrode 7; a second electrode 4o; a third electrode 4s; and a fourth electrode 4p. The first electrode is electrically connected to the first semiconductor layer. The second electrode forms an ohmic contact to the second semiconductor layer, and has translucency to the light emitted from the light emitting layer. The third electrode penetrates the second electrode, electrically connected to the second electrode, and forms a Schottky contact to the second semiconductor layer. The fourth electrode is formed on a side, opposite to the second semiconductor layer, of the third electrode, and has the same planar geometry as that of the third electrode when viewed from the stacking direction of the stacked layer structure. <P>COPYRIGHT: (C)2010,JPO&INPIT |
