| 摘要 |
An exposure system includes a exposure tool for projecting an image of a mask pattern onto a first resist with test values of a dose to form test resist patterns, a microscope for defining coordinates of mask positions along the mask pattern in a scan direction, measuring actual values of a mask line width of the mask pattern at the coordinates, and measuring actual values of a resist line width of each of the test resist patterns at projected positions, a collection module for collecting a relationship among the mask line width, the resist line width, and the dose at the coordinates, and a tool controller for controlling the exposure tool to project the image of the mask pattern onto a second resist with changing the dose depending on the coordinates to make the resist line width constant, based on the relationship.
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