发明名称 Method for manufacturing a semiconductor device
摘要 A semiconductor device includes a semiconductor substrate including an active region and a gate region, and a gate channel formed in a portion of the active region that overlaps the gate region. The gate channel includes a recessed multi-bulb structure.
申请公布号 US7785967(B2) 申请公布日期 2010.08.31
申请号 US20070819853 申请日期 2007.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM JUNG SAM
分类号 H01L21/336 主分类号 H01L21/336
代理机构 代理人
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