| 摘要 |
A method for fabricating a semiconductor device includes forming at least two gate insulating layers having different thickness on a substrate having low, medium and high voltage regions; and then depositing a gate layer material on the gate insulating layers; and then forming a first etch mask on the gate layer material; and then forming gate electrodes in the low, medium and high voltage regions by etching the gate layer material using the first etch mask; and then forming a second etch mask to expose a thickest one of the gate insulating layers, the gate electrode and the first etch mask each formed in the high voltage region while covering the remaining gate insulating layers, the gate electrodes and the first etch masks formed in the low and medium voltage regions; and then etching the thickest gate insulating layer using the second etch mask; and then removing the first and second etch masks. Thereby, the first etch mask used for forming the gates remains without being removed even after the gate is formed to perform a role of a barrier during etching the gate insulating layer.
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