| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a thin-film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability. <P>SOLUTION: Film deposition is performed using an oxide semiconductor target containing an insulator (an insulating oxide, an insulating nitride, silicon oxynitride, aluminum oxynitride, or the like), typically SiO<SB>2</SB>, so that the semiconductor device in which the Si-element concentration in the thickness direction of the oxide semiconductor layer has a concentration gradient which increases in accordance with an increase in a distance from a gate electrode is realized. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
