| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a crack-free embedded nitride semiconductor laser device providing a high optical confinement effect and a current block effect. Ž<P>SOLUTION: This nitride semiconductor laser device includes: an n-AlGaN clad layer 103; an InGaN quantum well active layer 105 located above the n-AlGaN clad layer 103; a current constriction layer 120 located above the InGaN quantum well active layer 105 and having an opening formed thereon; and a p-GaN guide layer 111 formed on the upper surface and in the opening of the current constriction layer 120. The current constriction layer 120 is formed of a nitride semiconductor containing Al, and the Al composition of the current constriction layer 120 is increased toward the upper side. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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