| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an organic semiconductor element which has a protective film formed so that an organic semiconductor layer is not damaged and device characteristics are not deteriorated, and to provide a method of manufacturing the organic semiconductor element. Ž<P>SOLUTION: The organic semiconductor element 1 has a substrate 2, and a gate electrode 3 is provided on the upper surface of the substrate 2. A gate insulating layer 4 is provided on the upper surface of the gate electrode 3 and the upper surface of the substrate 2. On the upper surface of the gate insulating layer 4, a source electrode 7 and a drain electrode 8 are provided apart from each other. On the upper surface of the gate insulating layer 4 which is sandwiched between the source electrode 7 and the drain electrode 8, the organic semiconductor layer 6 is provided. On the upper surfaces of the organic semiconductor layer 6, source electrode 7, drain electrode 8, and gate insulating layer 4, a protective film 10 which has a three-layer structure comprising a fluororesin layer 11, a water-soluble resin layer 12, and a glass coating layer 13 from the lower side thereof is provided. On the upper surface of the protective film 10, a pixel electrode 21 is formed. The pixel electrode 21 is electrically connected to the source electrode 7 through a contact hole 31. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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