发明名称 FERROELECTRIC MATERIAL AND METHOD OF FORMING FERROELECTRIC LAYER USING THE SAME
摘要 Disclosed herein are a ferroelectric material that can be effectively used in manufacturing various electric and electronic elements, and a method of forming a ferroelectric layer using the ferroelectric material. The ferroelectric material in accordance with the present invention is composed of a mixture of an inorganic ferroelectric material and an organic ferroelectric material. The method of forming a ferroelectric layer includes: preparing a mixed solution of an inorganic ferroelectric material and an organic material; forming a ferroelectric film by applying the mixed solution onto a substrate; and forming a ferroelectric layer by annealing the ferroelectric film.
申请公布号 US2010215836(A1) 申请公布日期 2010.08.26
申请号 US20070523319 申请日期 2007.06.14
申请人 UNIVERSITY OF SEOUL FOUNDATION OF INDUSTRY- ACADEMIC COOPERATION 发明人 PARK BYUNG-EUN
分类号 B05D5/12;B05D3/02;H01B1/02;H01B1/12 主分类号 B05D5/12
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