发明名称 |
FERROELECTRIC MATERIAL AND METHOD OF FORMING FERROELECTRIC LAYER USING THE SAME |
摘要 |
Disclosed herein are a ferroelectric material that can be effectively used in manufacturing various electric and electronic elements, and a method of forming a ferroelectric layer using the ferroelectric material. The ferroelectric material in accordance with the present invention is composed of a mixture of an inorganic ferroelectric material and an organic ferroelectric material. The method of forming a ferroelectric layer includes: preparing a mixed solution of an inorganic ferroelectric material and an organic material; forming a ferroelectric film by applying the mixed solution onto a substrate; and forming a ferroelectric layer by annealing the ferroelectric film.
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申请公布号 |
US2010215836(A1) |
申请公布日期 |
2010.08.26 |
申请号 |
US20070523319 |
申请日期 |
2007.06.14 |
申请人 |
UNIVERSITY OF SEOUL FOUNDATION OF INDUSTRY- ACADEMIC COOPERATION |
发明人 |
PARK BYUNG-EUN |
分类号 |
B05D5/12;B05D3/02;H01B1/02;H01B1/12 |
主分类号 |
B05D5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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