发明名称 |
Semiconductor device having a heterojunction diode and manufacturing method thereof |
摘要 |
Impurity concentration of a second semiconductor region is set such that when a predetermined reverse bias is applied to a heterojunction diode configured by a first semiconductor region and the second semiconductor region, a breakdown voltage at least in a heterojunction region other than outer peripheral ends of the heterojunction diode is a breakdown voltage of a semiconductor device.
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申请公布号 |
US7781786(B2) |
申请公布日期 |
2010.08.24 |
申请号 |
US20070783577 |
申请日期 |
2007.04.10 |
申请人 |
NISSAN MOTOR CO., LTD. |
发明人 |
HAYASHI TETSUYA;HOSHI MASAKATSU;SHIMOIDA YOSHIO;TANAKA HIDEAKI;YAMAGAMI SHIGEHARU |
分类号 |
H01L29/22;H01L21/28;H01L21/329;H01L29/417;H01L29/47;H01L29/732;H01L29/739;H01L29/861;H01L29/864;H01L29/868;H01L29/872;H01L31/0328;H01L31/0336;H01L31/072;H01L31/107;H01L31/109;H01L33/00 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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地址 |
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