| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a non-defective product rate, and to improve a production yield by suppressing defects caused by of an increase of on-resistance in long-time drive in a group III-V compound semiconductor element. Ž<P>SOLUTION: The group III-V compound semiconductor element includes: a channel layer 104 formed over a substrate 102; a barrier layer 105 formed on the channel layer so as to form a hetero interface; a plurality of electrodes 106, 107, 108 formed on the barrier layer; an insulating layer 109 formed to cover an entire surface of the barrier layer except for at least partial regions of the electrodes; and a hydrogen-adsorbing layer 110 stacked on the insulating layer or an integrated layer in which the insulating layer is integrated with a hydrogen-adsorbing layer. In this case, the diffusion of hydrogen atoms existing in the layer to the side of a semiconductor layer can be suppressed by a force which adsorbs the hydrogen-adsorbing layer 110 or the integrated layer the hydrogen. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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