RECESSED DRAIN AND SOURCE AREAS IN COMBINATION WITH ADVANCED SILICIDE FORMATION IN TRANSISTORS

摘要

During the manufacturing process for forming sophisticated transistor elements, the gate height may be reduced and also a recessed drain and source configuration may be obtained in a common etch sequence prior to forming respective metal suicide regions. Since the corresponding sidewall spacer structure may be maintained during the etch sequence, controllability and uniformity of the silicidation process in the gate electrode may be enhanced, thereby obtaining a reduced degree of threshold variability. Furthermore, the recessed drain and source configuration may provide for reduced overall series resistance and enhanced stress transfer efficiency.