发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING IMPROVED PRECHARGE SCHEME FOR GLOBAL I/O LINES |
摘要 |
PURPOSE: A semiconductor memory device is provided to stabilize the cell data stored in advance without any damage by minimizing or removing a bit line disturb problem during implementation of data masking operation mode in write operation. CONSTITUTION: A local input output line precharge unit(19) is connected to a local input output line pair. A global input output line precharge part(21) is connected to the global input output line pair. A column selection part(15) operationally interlinks the bit line pair connected to the bit line sense amp and the local input output line pair interval in response to the column selection signal. A local input output line selecting unit operationally interlinks the local input output line pair and the global input output line pair interval in response to the multiplexing control signal.
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申请公布号 |
KR20100091769(A) |
申请公布日期 |
2010.08.19 |
申请号 |
KR20090011120 |
申请日期 |
2009.02.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG, DAE HEE |
分类号 |
G11C7/10;G11C7/12 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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