| 摘要 |
Provided are an ultrafast magnetic recording element and a nonvolatile magnetic random access memory using the same. The magnetic recording element includes a read electrode, a magnetic pinned layer formed on the read electrode, and an insulating layer or a conductive layer formed on the magnetic pinned layer. The magnetic recording element includes a magnetic free layer formed on the insulating layer or the conductive layer, in which a magnetic vortex is formed, and a plurality of drive electrodes applying a current or magnetic field to the magnetic free layer. Alternatively, the magnetic recording element includes a magnetic free layer in which a magnetic vortex is formed, a plurality of drive electrodes applying a current or a magnetic field to the magnetic free layer, and a read line disposed around the magnetic free layer. Herein, a current generated by a voltage induced by the movement of a magnetic vortex core flows through the read line. According to the magnetic recording elements, the magnetic recording element with a simple structure can be realized using a magnetic layer with a magnetic vortex formed, and the magnetic recording element can be accurately driven with low power using a plurality of drive electrodes.
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