| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device that reduces a leakage current in a high electric field region or low electric field region, and to provide a method of manufacturing the same. SOLUTION: The nonvolatile semiconductor storage device includes source/drain regions 111 provided in surface regions of a semiconductor substrate 101 and provided apart from each other, a tunnel insulating film 102 provided on a channel between the source/drain regions 111, a charge storage layer 103 provided on the tunnel insulating film 102, a first dielectric film 105 provided on the charge storage layer 103 and containing lantern aluminum silicon oxide or oxynitride, a second dielectric film 106 provided on the first dielectric film 105 and containing oxide or oxynitride containing at least one of hafnium (Hf), zirconium (Zr), titanium (Ti), and rare-earth metal, and a control gate electrode 107 provided on the second dielectric film 106. COPYRIGHT: (C)2010,JPO&INPIT
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