| 摘要 |
<p>The present invention provides a bonding method in which a bonded portion having a sufficient bonding strength can be obtained at a relatively low temperature, for example, in die bonding a semiconductor chip. A metal paste 20 was applied to a semiconductor chip 10, the metal paste 20 consisting of metal powder of one or more kinds selected from gold powder, silver powder, platinum powder, and palladium powder having a purity not lower than 99.9 wt% and an average particle diameter of 0.005 µm to 1.0 µm and an organic solvent. After being applied, the metal paste 20 was dried in a vacuum in a dryer. The chip was heated at 230°C for 30 minutes to sinter the metal paste, by which a metal powder sintered compact 21 was formed. Next, a nickel plate 30 was placed on the semiconductor chip 10, and bonded to the semiconductor chip 10 by heating and pressurization.</p> |
