HOCHORIENTIERTE DIAMANTSCHICHT, VERFAHREN ZU IHRER HERSTELLUNG SOWIE ELEKTRONISCHE VORRICHTUNG MIT EINER HOCHORIENTIERTEN DIAMANTSCHICHT

摘要

A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C] - [O])/[CH 3 + H 2 + O 2 ] is -0.2 × 10 -2 or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750°C and 1000°C.