发明名称 |
METHOD OF CLOSING AT LEAST ONE VOID FOR MICROELECTRONIC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of closing at least one void to capsulate a microelectronics device or intended to be a part of the microelectronics device. SOLUTION: The method includes: (a) the step of manufacturing voids in a first substrate including a first layer where an opening for forming a passage to the voids is transversed; (b) the step of manufacturing a binder portion around the opening on the surface of the first layer disposed on the opposite side of the voids; (c) the step of manufacturing a fusible material portion on a second substrate by depositing the fusible material on the second substrate and using a mask; (d) the step of disposing the fusible material portion by bringing it into contact with the binder portion; (e) the step of forming a plug for the opening bonded to the binder portion by dissolving the fusible material, followed by solidification; and (f) the step of separating the plug and the second substrate. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010173063(A) |
申请公布日期 |
2010.08.12 |
申请号 |
JP20100015463 |
申请日期 |
2010.01.27 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE & AUX ENERGIES ALTERNATIVES |
发明人 |
DELAPIERRE GILLES;DIEM BERNARD;PERRUCHOT FRANCOIS |
分类号 |
B81C3/00;H01L23/02 |
主分类号 |
B81C3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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