发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a new semiconductor device using an oxide semiconductor. SOLUTION: The semiconductor device includes: a substrate (for example, a substrate having an insulating surface); a first electrode layer on the substrate; an oxide semiconductor layer partially existing on the first electrode; a gate insulating later covering a side surface of the oxide semiconductor layer; a second electrode layer electrically connected to the oxide semiconductor layer in an opening of the gate insulating layer; and a third electrode layer for applying a voltage to the side surface of the oxide semiconductor layer via the gate insulating layer. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010177450(A) |
申请公布日期 |
2010.08.12 |
申请号 |
JP20090018446 |
申请日期 |
2009.01.29 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;KISHIDA HIDEYUKI |
分类号 |
H01L29/786;H01L21/28;H01L29/417;H01L29/423;H01L29/49 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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