EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE, GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND GALLIUM OXIDE WAFER

摘要

Provided is a gallium nitride semiconductor device including a gallium nitride semiconductor film which is provided on a gallium oxide wafer and has a flat c plane. A light emitting diode (LED) is provided with a gallium oxide supporting base body (32) having the main surface (32a) composed of a monoclinic gallium oxide, and a multilayer structure (33) composed of a III nitride. The semiconductor mesa of the multilayer structure (33) includes a low-temperature GaN buffer layer (35), an n-type GaN layer (37), an active layer (39) having a quantum well structure, and a p-type gallium nitride semiconductor layer (37). The p-type gallium nitride semiconductor layer (37) includes, for instance, a p-type AlGAn electron block layer and a p-type GaN contact layer. The main surface (32a) of the gallium oxide supporting base body (32) is tilted by an angle of 2 degrees or more but not more than 4 degrees with respect to the (100) plane of the monoclinic gallium oxide. With such tilt, the gallium nitride semiconductor epitaxially grown on the gallium oxide supporting base body main surface (32a) has a flat surface.