Method for producing MOSFET contacts on surface of silicon carbide semiconductor material of e.g. semiconductor element, involves heating metal layer to specific temperature, and removing metal layer from region of insulation layer

摘要

The method involves generating holes in an insulation layer (3), where the holes expose a region of a silicon carbide semiconductor material (2). A metal layer (6) is formed from silicide, and applied on the insulation layer and on the semiconductor material. The metal layer is heated to a specific temperature such that the material of the metal layer chemically reacts only with the semiconductor material and/or a coating is formed. The metal layer is removed from the region of the insulation layer. An independent claim is also included for a semiconductor element comprising a semiconductor material.