| 摘要 |
There is provided a semiconductor device including: a field effect transistor that is provided with a gate region, a drain region and a source region and that is formed on a substrate; a circuit region that is formed on the substrate so as to be electrically isolated from the field effect transistor; a first guard ring that is formed in a ring shape encircling the field effect transistor and that includes an internal resistance; and a second guard ring that is formed in a ring shape encircling the circuit region, that forms a capacitance between the second guard ring and the gate region by capacitive coupling with the gate region, and that includes an internal resistance.
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