发明名称 SEMICONDUCTOR MEMORY DEVICE COMPRISING INTERNAL VOLTAGE GENERATOR
摘要 PURPOSE: A semiconductor memory device including an internal voltage generator is provided to prevent the malfunction of a semiconductor memory device by adjusting the magnitude of the internal voltage according to the temperature. CONSTITUTION: A comparison voltage generator(10) outputs the comparison voltage in response to the difference between the reference voltage and the input voltage. An internal voltage driving unit(20) outputs the internal voltage by adjusting the external power voltage inputted from the outside in response to the comparison voltage. An input voltage generator(30) outputs the input voltage varying according to the temperature by comprising a first resistance unit(31) and a second resistance unit(32).
申请公布号 KR20100089365(A) 申请公布日期 2010.08.12
申请号 KR20090008576 申请日期 2009.02.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, KI HEUNG;CHO, YONG HO;JANG, SEONG JIN;LEE, TAE YOON
分类号 G11C5/14;G11C7/04 主分类号 G11C5/14
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