| 摘要 |
PURPOSE: A nonvolatile memory device is provided to terminate a clock which is applied to a high voltage switch circuit by sensing a high voltage which is higher than a predetermined voltage. CONSTITUTION: A high voltage pump(110) generates a high voltage which is used in the program operation or the read-out operation of a device. A high voltage switch circuit(120) applies a high voltage to a selected work line in response to a word line address signal and a gradually increasing clock signal. A memory cell array(130) is programmed according to the voltage which is applied to a word line. A detection signal generator(140) generates a detection signal by using a high voltage and a reference voltage. A clock enable signal generator(150) outputs a clock enable signal or a clock disable signal in response to the detection signal. A clock generator(160) outputs a clock signal in response to the word line address signal, the clock enable signal or the clock disable signal. |
