| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to precisely form memory holes which pass through a plurality of conductive layer word-lines and a plurality of dielectric layers by suppressing the etching amount of a first mask layer. CONSTITUTION: A dielectric layer(17) including a silicon oxide and a conductive layer including silicon are laminated to form a laminate. A first mask layer(41) including a silicon oxide is formed on the laminate. The mask layer is used as a mask in order to etch the conductive layer. A second mask layer(42) is formed on the first mask layer. The content of silicon in the second mask layer is higher than that of silicon in the dielectric layer. The second mask layer is used as a mask in order to etch the dielectric layer. Holes, which pass through the dielectric layer and the conductive layer, are formed in the laminate.</p> |
