EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND MEHTOD FOR PRODUCING SAME

摘要

Disclosed is an epitaxial SiC single crystal substrate which has a high-quality epitaxial film that is obtained by epitaxial growth using a substrate having an off angle of 6° or less, while suppressing the formation of step-bunching. Also disclosed is a method for producing the epitaxial SiC single crystal substrate. Specifically disclosed is an epitaxial silicon carbide single crystal substrate which is obtained by forming a silicon carbide single crystal thin film on a silicon carbide single crystal substrate having an off angle of 6° or less. The epitaxial silicon carbide single crystal substrate is characterized in that the surface roughness (Ra) of the surface of the silicon carbide single crystal thin film is not more than 0.5 nm. Also specifically disclosed is a method for producing the epitaxial silicon carbide single crystal substrate.