| 摘要 |
<P>PROBLEM TO BE SOLVED: To stabilize voltage potential in a photodiode region without reducing a light-receiving area of a photodiode in an imaging device. <P>SOLUTION: A semiconductor device 100 is configured such that a plurality of pixels are arranged on a substrate 101 in an array form. Each of the plurality of pixels includes: a photodiode region 103 comprising an N-type diffusion layer; and a buried region 104 formed on the photodiode region 103 and comprising a P-type diffusion layer. Poly-silicon 117 is formed on the buried region 104 so as to be electrically connected thereto. <P>COPYRIGHT: (C)2010,JPO&INPIT |
