| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film which is easily subjected to machining such as patterning, and capable of indicating low specific resistance and heat resistance. Ž<P>SOLUTION: A precursor thin film of a conductive thin film to be formed on a base material through the vapor deposition process consists mainly of indium oxide, and contains tin. In the precursor thin film, the assigned diffraction line is detected, in which the 2θ position of the diffraction line of indium oxide to be measured by the measurement of X-ray diffraction using the CuKα ray is ≤30.3° in terms of the (2 2 2) plane, and ≤35.3° in terms of (4 0 0) plane. The ratio (I<SB>222</SB>/I<SB>400</SB>) of the intensity (I<SB>222</SB>) of the diffraction line by the (2 2 2) plane to the intensity (I<SB>400</SB>) of the diffraction line by the (4 0 0) plane is ≤5. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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