| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor light-emitting element whose light emission efficiency is enhanced by utilizing surface plasmon resonance. <P>SOLUTION: One embodiment is a semiconductor light-emitting element including n- and p-type semiconductor layers, an active layer formed between such layers, and a surface plasmon layer formed between at least one of the n- and p-type semiconductor layers and the active layer, constituted of metal particles and an insulation material but having a structure in which the metal particles are sealed against at least one of the n- and p-type semiconductor layers by the insulation material, and constituted of a conductive via for electrical conduction, between at least one of the n- and p-type semiconductor layers and the active layer. In particular, diffusion of the metal employed for surface plasmon resonance into the active layer can be minimized, when the semiconductor light-emitting element is used. <P>COPYRIGHT: (C)2010,JPO&INPIT |
