NAND MEMORY DEVICE WITH INVERSION BIT LINES AND METHODS FOR MAKING THE SAME

摘要

A NAND based memory device uses inversion bit lines in order to eliminate the need for implanted bit lines. As a result, the cell size can be reduced, which can provide greater densities in smaller packaging. In another aspect, a method for fabricating a NAND based memory device that uses inversion bit lines is disclosed.