发明名称 |
Semiconductor device producing method |
摘要 |
Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10−1 or lower.
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申请公布号 |
US7767594(B2) |
申请公布日期 |
2010.08.03 |
申请号 |
US20070990451 |
申请日期 |
2007.01.17 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
MIYA HIRONOBU;ASAI MASAYUKI;MIZUNO NORIKAZU |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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