Semiconductor device including multi-layered interconnection and method of manufacturing the device

摘要

The semiconductor device includes a semiconductor substrate, and a multi-layer wiring portion including insulating layers and wiring layers alternately stacked one on another on a main surface of the semiconductor substrate. All of the wiring layers are made of a same basis metal, at least one of the wiring layers contains an additive element, and a concentration of the additive element is lower on an upper layer side than that on a lower layer side.