Transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility

摘要

By appropriately orienting the channel length direction with respect to the crystallographic characteristics of the silicon layer, the stress-inducing effects of strained silicon/carbon material may be significantly enhanced compared to conventional techniques. In one illustrative embodiment, the channel may be oriented along the <100> direction for a (100) surface orientation, thereby providing an electron mobility increase of approximately a factor of four.