| 发明名称 |
Protection of SiGe during etch and clean operations |
| 摘要 |
A method of making a semiconductor device includes forming a transistor structure having one of an embedded epitaxial stressed material in a source and drain region and a stressed channel and well, subjecting the transistor structure to plasma oxidation, and removing spacer material from the transistor structure.
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| 申请公布号 |
US7767579(B2) |
申请公布日期 |
2010.08.03 |
| 申请号 |
US20070954802 |
申请日期 |
2007.12.12 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAKRAVARTI ASHIMA B;LUO ZHIJIONG;MO RENEE TONG;NARASIMHA SHREESH;ONISHI KATSUNORI |
| 分类号 |
H01L21/44;H01L21/31;H01L21/469 |
主分类号 |
H01L21/44 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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