SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce contact resistance by forming a source region or drain region between an oxide semiconductor layer and a source electrode layer and drain electrode layer. CONSTITUTION: A gate electrode is formed on an insulation surface. An oxide semiconductor layer(103) contains SiOx. An insulation layer is formed between the gate electrode and the oxide semiconductor with SiOx. A source region(104a) or drain region(104b) is formed between the oxide semiconductor layer with SiOx and the source electrode layer or drain electrode layer. The source region or drain region is made of oxide nitride materials.