发明名称 |
System for Depositing a Film Onto a Substrate Using a Low Vapor Pressure Gas Precursor |
摘要 |
A method for depositing a film onto a substrate is provided. The substrate is contained within a reactor vessel at a pressure of from about 0.1 millitorr to about 100 millitorr. The method comprises subjecting the substrate to a reaction cycle comprising i) supplying to the reactor vessel a gas precursor at a temperature of from about 20° C. to about 150° C. and a vapor pressure of from about 0.1 torr to about 100 torr, wherein the gas precursor comprises at least one organo-metallic compound; and ii) supplying to the reactor vessel a purge gas, an oxidizing gas, or combinations thereof.
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申请公布号 |
US2010190331(A1) |
申请公布日期 |
2010.07.29 |
申请号 |
US20090559928 |
申请日期 |
2009.09.15 |
申请人 |
SELBREDE STEVEN C;ZUCKER MARTIN;VENTURO VINCENT |
发明人 |
SELBREDE STEVEN C.;ZUCKER MARTIN;VENTURO VINCENT |
分类号 |
C23C16/448;H01L21/443;C23C16/06;C23C16/18;C23C16/40;C23C16/44;C23C16/455;H01L21/316;H01L21/469;H01L21/8242;H01L27/108 |
主分类号 |
C23C16/448 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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