发明名称 |
Manufacturing method of semiconductor substrate and substrate processing apparatus |
摘要 |
A first processing gas containing a first element and a second processing gas containing a second element are alternately supplied to a surface of a substrate placed in a processing chamber, to thereby form a first thin film, and a second processing gas and a third processing containing the first element and different from the first processing gas are alternately supplied, to thereby form a second thin film on the first thin film, having the same element component as that of the first thin film.
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申请公布号 |
US2010190348(A1) |
申请公布日期 |
2010.07.29 |
申请号 |
US20100654878 |
申请日期 |
2010.01.07 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
AKAE NAONORI;HIROSE YOSHIRO;KATO TOMOHIDE |
分类号 |
H01L21/465;H01L21/46;H01L21/477 |
主分类号 |
H01L21/465 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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