发明名称 |
Method for Fabricating Semiconductor Memory Device |
摘要 |
A method for fabricating a semiconductor memory device includes: forming a lower conductive layer over a semiconductor substrate; forming an insulation layer over the lower conductive layer; etching the insulation layer to form a contact hole that exposes a portion of the lower conductive layer; forming a contact plug in the contact hole; doping the contact plug by performing a plasma doping process while varying a temperature of regions the semiconductor substrate; and forming an upper conductive layer connected with the lower conductive layer through the contact plug.
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申请公布号 |
US2010190326(A1) |
申请公布日期 |
2010.07.29 |
申请号 |
US20090489019 |
申请日期 |
2009.06.22 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JOUNG YONG SOO;JIN SEUNG WOO;LEE AN BAE;JOO YOUNG HWAN |
分类号 |
H01L21/28;H01L21/768 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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