| 摘要 |
A data storage medium that includes a multiferroic thin film and ferromagnetic storage domains formed in the multiferroic thin film. The multiferroic thin film may be formed of at least one of BiFeO3, or any other ferroelectric and antiferromagnetic material. The ferromagnetic storage domains may be formed in the multiferroic thin film by an ion implantation process. A data storage system that incorporates the data storage medium is also provided.
|
