PURPOSE: A semiconductor light emitting device is provided to prevent an electrical characteristic from being reduce due to the change of the thickness of a p-type semiconductor layer by forming a surface Plasmon layer to be adjacent to an active layer. CONSTITUTION: An n-type semiconductor layer(102) is formed on a substrate(101). A surface Plasmon layer(103) is formed on the n-type semiconductor layer. An active layer(104) is formed on the surface Plasmon layer. A p-type semiconductor layer(105) is formed on the active layer. An n-type electrode(106a) and a p-type semiconductor electrode(106b) are formed on the n-type and the p-type semiconductor layers, respectively. The surface Plasmon layer includes a conductive via for conductive electricity.
