| 摘要 |
<p>[PROBLEM] A method for producing an annealed wafer having enhanced gettering effects for Cu is provided. [SOLUTION] A method for producing an annealed wafer, characterized in comprising heating a silicon substrate containing a nitrogen concentration of 5x1014 to lx1016/cm3, a carbon concentration of 1x1015 to 5x1016/cm3, and an oxygen concentration of 6x1017 to 11x1017/cm3 at a temperature of 650 to 8000C for a time equal to or longer than 4 hours, and subjecting the heated substrate to argon annealing at a temperature of 1100 to 1250 0C, wherein internal stacking fault density after annealing is equal to or higher than 5x108/cm3. [SELECTION DRAWING]</p> |
