| 摘要 |
PROBLEM TO BE SOLVED: To selectively remove oxidized portions from the surface of wiring formed on a semiconductor device having the damascene interconnect structure. SOLUTION: In manufacturing the semiconductor device with the damascene interconnect structure, the surface of wiring is subjected to reverse sputtering with Xe plasma. When reverse sputtering is carried out with Xe plasma gas, the oxidized portions can be efficiently removed selectively from the surface of the wiring, so the contact resistance between upper and lower interconnections can be prevented from increasing in the damascene interconnect structure. Damages to an insulating film, which is made of fluorocarbon (CF) or the like and formed on the wiring, can be suppressed, and variations in the dielectric constant of insulating films can also be suppressed. COPYRIGHT: (C)2010,JPO&INPIT |
