| 摘要 |
<p>An acoustic wave device (1) having an improved frequency-temperature characteristic and in which a spurious response of the higher order mode is suppressed includes a piezoelectric substrate (2) made of LiNbO 3 , a SiO 2 layer (6) laminated on the piezoelectric substrate, and an IDT electrode (3) disposed in an interface of the piezoelectric substrate and the SiO 2 layer, wherein Æ and ¸ of Euler angles expressed by (Æ, ¸, È) of the LiNbO 3 substrate (2) satisfy Æ=0°and 80°‰¤¸‰¤130°, respectively. The acoustic wave device using an acoustic wave primarily having an SH wave, wherein È is set to satisfy 5°‰¤È‰¤30°.</p> |
