发明名称 Hybrid sense amplifier and method, and memory device using same
摘要 Sense circuits, devices and methods are disclosed, including a sense amplifier circuit that has first and second complementary data lines and a sensing circuit. One of the data lines can be coupled to a memory cell for data sensing and the other data line can be used as reference. The sensing circuit has first and second complementary output nodes and is coupled to the data lines. In a first mode, the sensing circuit can sense a difference between a voltage on the first digit line and a voltage on the second digit line to generate a first voltage differential between the first and second output nodes. In a second mode, the sensing circuit can sense a difference between a current flow in the first digit line and a current flow in the second digit line to generate a second voltage differential between the first and second output nodes. Other sense circuits, devices and methods are also provided.
申请公布号 US7764558(B2) 申请公布日期 2010.07.27
申请号 US20080115687 申请日期 2008.05.06
申请人 MICRON TECHNOLOGY, INC. 发明人 ABE KEIICHIRO;ITO YUKATA
分类号 G11C7/02 主分类号 G11C7/02
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